SSDF9510 datasheet(3/7 Pages) SECOS

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SSDF9510

13A, 100V, RDS(ON) 110mΩ

Ω

-13A, -100V, RDS(ON) 210mΩ

Ω

N And P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

14-Nov-2012 Rev. A

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Guaranteed Avalanche Chatacteristics

Single Pulse Avalanche Energy

5 N-Ch

EAS

VDD=50V, L=1mH, IAS=5A

P-Ch

VDD= -50V, L=1mH,IAS = -5A

Source-Drain Diode

Forward On Voltage

N-Ch

VSD

1.2

IS=1A, VGS=0, TJ=25°C

P-Ch

-1.2

IS= -1A, VGS=0, TJ=25°C

Continuous Source Current

1,6

N-Ch

VD=VG=0, Force Current

P-Ch

-13

Pulsed Source Current

2,6

N-Ch

ISM

P-Ch

-48

Notes:

Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

Pulse width≦300µs, duty cycle≦2%.

3 The EAS data shows Max. rating . The test condition is VDD=±50V,VGS=±10V,L=1mH,IAS=±10A

4 .The power dissipation is limited by 150 °C junct ion temperature

5 The Min. value is 100% EAS tested guarantee.

6 The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

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