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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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CSB1116A Datenblatt(PDF) 1 Page - Continental Device India Limited |
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CSB1116A Datenblatt(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSB1116 CSB1116A TO-92 BCE Audio Frequency Power Amplifier And Medium Speed Switching Complementary CSD1616/1616A ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C) DESCRIPTION SYMBOL CSB1116 CSB1116A UNIT Collector -Base Voltage VCBO 60 80 V Collector -Emitter Voltage VCEO 50 60 V Emitter Base Voltage VEBO V Collector Current DC IC A Collector Current Pulse IC* A Collector Dissipation PC W Operating And Storage Junction Tj, Tstg deg C Temperature Range *PW=10ms, duty Cycle=50% ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Cut off Current ICBO VCB=60V, IE=0 - - 100 nA Emitter Cut off Current IEBO VEB=6V, IC=0 - - 100 nA DC Current Gain CSB1116 hFE(1) * IC=100mA, VCE=2V 135 600 CSB1116A 135 400 hFE(2) * IC=1A, VCE=2V 81 - - Base Emitter On Voltage VBE(on)* VCE=2V,IC=50mA 0.60 - 0.70 V Collector Emitter Saturation Voltage VCE(Sat) * IC=1A, IB=50mA - - 0.35 V Base Emitter Saturation Voltage VBE(Sat) * IC=1A, IB=50mA - - 1.2 V Dynamic Characteristics Transition Frequency ft VCE=2V,IC=100mA, 70 - - MHz Collector Output Capacitance Cob VCB=10V, IE=0 - 25 - pF f=1MHz SWITCHING TIMES Turn on time ton VCC=10V,IC=100mA - 0.07 - us Storage time tstg IB1=IB2=10mA, - 0.7 - us Fall time tf VBE(off)2=3V - 0.07 - us hFE(1) CLASSIFICATION CSB1116 Y: 135-270 G: 200-400 L: 300-600 *Pulse Test : PW=350us, Duty Cycle=2% Pulsed 0.75 55 to +150 6 1 2 Continental Device India Limited Data Sheet Page 1 of 3 E C B Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Ähnliche Teilenummer - CSB1116A |
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Ähnliche Beschreibung - CSB1116A |
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