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EM564161 Datenblatt(PDF) 3 Page - Etron Technology, Inc.

Teilenummer EM564161
Bauteilbeschribung  256K x 16 Low Power SRAM
PDF  13 Pages
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Hersteller  ETRON [Etron Technology, Inc.]
Direct Link  http://www.etron.com
Logo ETRON - Etron Technology, Inc.

EM564161 Datenblatt(HTML) 3 Page - Etron Technology, Inc.

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EtronTech
EM564161
Preliminary
3
Rev 2.6
October 2000
Operating Mode
Mode
CE1#
CE2
OE#
WE#
LB#
UB#
DQ0~DQ7
DQ8~DQ15
L
L
DOUT
DOUT
H
L
High-Z
DOUT
Read
L
H
L
H
L
H
DOUT
High-Z
L
L
DIN
DIN
H
L
High-Z
DIN
Write
L
H
X
L
L
H
DIN
High-Z
L
H
H
H
X
X
Output Deselect
L
H
X
X
H
H
High-Z
High-Z
H
X
X
X
X
X
Standby
X
L
X
X
X
X
High-Z
High-Z
Note: X = don't care. H=logic high. L=logic low.
Absolute Maximum Ratings
Supply voltage, VDD
-0.3 to +4.6V
Input voltages, VIN
-0.3 to +4.6V
Input and output voltages, VI/O
-0.5 to VDD
+0.5V
Operating temperature, TOPR
-40 to +85
°C
Storage temperature, TSTRG
-55 to +150
°C
Soldering Temperature (10s), TSOLDER
260
°C
Power dissipation, PD
0.6 W
DC Recommended Operating Conditions (Ta=-40
°C to 85°C)
Symbol
Parameter
Min
Typ
Max
Unit
VDD
Power Supply Voltage
2.3
−
3.6
V
VIH
Input High Voltage
2.2
−
VDD + 0.3
(1)
V
VIL
Input Low Voltage
-0.3
(2)
−
0.6
V
VDR
Data Retention Supply Voltage
1.0
−
3.6
V
Note:
(1) Overshoot : VDD +2.0V in case of pulse width
≤ 20ns
(2) Undershoot : -2.0V in case of pulse width
≤ 20ns



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