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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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MPSA55 Datenblatt(PDF) 1 Page - Continental Device India Limited |
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MPSA55 Datenblatt(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page  PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPSA55/ MPSA56 TO-92 Plastic Package General Purpose Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL MPSA55 Collector Emitter Voltage VCEO 60 Collector Base Voltage VCBO 60 Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg THERMAL RESISTANCE Junction to Case Rth (j-c) Junction to Ambient in free air *Rth (j-a) *Rth (j-a) is measured with the device soldered into a typical printed circuit board ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MPSA55 Collector Emitter Voltage VCEO IC=1mA, IB=0 >60 Emitter Base Voltage VEBO IE=100µA, IC=0 Collector Cut Off Current ICEO VCE=60V, IB=0 Collector Cut Off Current ICBO VCB=60V, IE=0 <100 VCB=80V, IE=0 DC Current Gain hFE IC=10mA, VCE=1V IC=100mA, VCE=1V Collector Emitter Saturation Voltage VCE (sat) IC=100mA, IB=10mA Base Emitter On Voltage VBE (on) IC=100mA, VCE=1V Current Gain Bandwidth Product **fT IC=100mA, VCE=1V, f=100MHz **fT is defined as the frequency at which IhfeI extrapolates to unity MPSA55_56Rev_1 240506E >50 MHz MPSA56 80 80 >4.0 <100 <100 >100 >100 ºC/W 12 nA nA nA UNITS V V -55 to +150 >80 <0.25 V <1.2 V V mA mW mW/ºC W mW/ºC ºC ºC/W UNITS V V 4.0 500 625 1.5 5.0 MPSA56 83.3 200 E B C Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Ähnliche Teilenummer - MPSA55 |
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Ähnliche Beschreibung - MPSA55 |
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