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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2N697 Datenblatt(PDF) 1 Page - Continental Device India Limited |
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2N697 Datenblatt(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  NPN SILICON EPITAXIAL TRANSISTOR 2N 697 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage VCER 40 V Collector Base Voltage VCBO 60 V Emitter Base Voltage VEBO 5V Power Dissipation @ Ta=25ºC PD 600 mW Derate Above 25ºC 4 mW/ºC Power Dissipation@ Tc=25ºC PD 2W Derate Above 25ºC 13.3 mW/ºC Operating And Storage Junction Tj, Tstg -65 to +200 ºC Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Collector Base Breakdown Voltage BVCBO IC=100µA,IE=0 60 V Collector Emitter Breakdown Voltage BVCER* IC=100mA,RBE=10Ω 40 V Emiter Base Breakdown Voltage BVEBO IE=100µA, IC=0 5V Collector Cut off Current ICBO VCB=30V, IE=0 1 µA VCB=30V, IE=0,Ta=150ºC 100 µA DC Current Gain hFE*IC=150mA,VCE=10V 10 120 Collector Emitter Saturation Voltage VCE(Sat) *IC=150mA,IB=15mA 1.5 V Base Emitter Saturation Voltage VBE(Sat) *IC=150mA,IB=15mA 1.3 V DYNAMIC CHARACTERISTICS Small Signal Current Gain | hfe |IC=50mA, VCE=10V, 2.5 f=20MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz 35 pF *Pulse Test: Pulse Width <300 µs, Duty Cycle <2% Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Ähnliche Teilenummer - 2N697 |
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Ähnliche Beschreibung - 2N697 |
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