PNP SILICON PLANAR EPITAXIAL TRANSISTORS

BCP51 BCP52 BCP53

SOT-223

Formed SMD Package

General Purpose Medium Power DC Applications

Complementary BCP54 BCP55 and BCP56

DESCRIPTION

SYMBOL

BCP51

BCP52

Collector Base Voltage

45

60

100

Collector Emitter Voltage

45

60

80

Emitter Base Voltage

Collector Current (DC)

Collector Current Peak

Base Current Peak

Storage Temperature

Junction Temperature

Operating Ambient Temperature

THERMAL RESISTANCE

From junction to ambient

From junction to soldering point

* Device Mounted on printed circuit board, single sided copper, tinplated, mounting pad for collector 1 cm

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Cut Off Current

100

nA

10

µA

Emitter Cut Off Current

100

nA

DC Current Gain

63

63

250

40

DC Current Gain

Group -10

63

160

Group -16

100

250

Collector Emitter Saturation Voltage

0.5

V

Base Emitter On Voltage

1.0

V

Transition Frequency

115

MHz

BCP51_53Rev011104E

- 65 to +150

ºC

95

14

K/W

K/W

W

ºC

ºC

150

0.2

1.3

- 65 to +150

UNITS

V

V

V

A

A

A

BCP53

5.0

1.0

1.5

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company