BC818 datasheet(2/3 Pages) CDIL

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Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

BC817

BC818

Collector–emitter voltage (VBE = 0)

VCES

max.

30 V

Collector–emitter voltage (open base)

IC = 10 mA

VCE0

max.

25 V

Emitter–base voltage (open collector)

VEB0

max.

5 V

Collector current (d.c.)

max.

500

Collector current (peak value)

ICM

max.

1000

Emitter current (peak value)

–IEM max.

1000

Base current (d.c.)

max.

100

Base current (peak value)

IBM

max.

200

Total power dissipation up to Tamb = 25 °C

Ptot

max.

250

Storage temperature

Tstg

–55 to +150

° C

Junction temperature

max.

150

° C

THERMAL RESISTANCE

From junction to ambient

Rth j–a = 500 K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector cut–off current

IE = 0; VCB = 20 V; Tj = 25 °C

ICB0

100 nA

IE = 0; VCB = 20V; Tj = 150°C

ICB0

µA

Emitter cut–off current

IC = 0; VEB = 5 V

IEB0

<10

µA

Base emitter voltage *

lC = 500 mA; VCE = 1 V

VBE

1,2 V

Saturation voltage

IC = 500 mA; IB = 50 mA

VCEsat <

700 mV

D.C. current gain

IC = 500 mA; VCE = 1 V

hFE

>40

IC = 100 mA; VCE = 1 V; BC817/BC818

hFE

100 to 600

BC817–16

hFE

100 to 250

BC818–16

BC817–25

hFE

160 to 400

BC818–25

BC817–40

hFE

250 to 600

BC818–40

Transition frequency at f = 100 MHz

IC = 10 mA; VCE = 5 V

100 MHz

Collector capacitance at f = 1 MHz

IE = Ie = 0; VCB = 10V

typ.

5 pF

BC817

BC818

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