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AT45DB641E Datenblatt(PDF) 1 Page - List of Unclassifed Manufacturers |
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AT45DB641E Datenblatt(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 72 page ![]() AT45DB641E DS-45DB641E-027E–DFLASH–1/2014 Features Single 1.7V - 3.6V supply Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 and 3 Supports RapidS™ operation Continuous read capability through entire array Up to 85MHz Low-power read option up to 15MHz Clock-to-output time (t V) of 8ns maximum User configurable page size 256 bytes per page 264 bytes per page (default) Page size can be factory pre-configured for 256 bytes Two fully independent SRAM data buffers (256/264 bytes) Allows receiving data while reprogramming the main memory array Flexible programming options Byte/Page Program (1 to 256/264 bytes) directly into main memory Buffer Write | Buffer to Main Memory Page Program Flexible erase options Page Erase (256/264 bytes) Block Erase (2KB) Sector Erase (256KB) Chip Erase (64-Mbits) Program and Erase Suspend/Resume Advanced hardware and software data protection features Individual sector protection Individual sector lockdown to make any sector permanently read-only 128-byte, One-Time Programmable (OTP) Security Register 64 bytes factory programmed with a unique identifier 64 bytes user programmable Hardware and software controlled reset options JEDEC Standard Manufacturer and Device ID Read Low-power dissipation 400nA Ultra-Deep Power-Down current (typical) 5µA Deep Power-Down current (typical) 25µA Standby current (typical) 11mA Active Read current (typical at 20MHz) Endurance: 100,000 program/erase cycles per page minimum Data retention: 20 years Complies with full industrial temperature range Green (Pb/Halide-free/RoHS compliant) packaging options 8-lead SOIC (0.208" wide) 8-pad Ultra-thin DFN (5 x 6 x 0.6mm) 8-pad Very-thin DFN (6 x 8 x 1.0mm) 9-ball BGA (6mm x 6mm package 3 x 3 ball array) AT45DB641E 64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory |
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Ähnliche Beschreibung - AT45DB641E |
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