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BC302 Datenblatt(PDF) 1 Page - Continental Device India Limited

Teilenummer BC302
Bauteilbeschribung  NPN EPITAXIAL PLANAR SILICON TRANSISTORS
PDF  3 Pages
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Hersteller  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BC302 Datenblatt(HTML) 1 Page - Continental Device India Limited

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NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302
TO-39
Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BC300 BC301
BC302
UNITS
Collector Emitter Voltage
VCEO
80
60
45
V
Collector Base Voltage
VCBO
120
90
60
V
Emitter Base Voltage
VEBO
7.0
7.0
7.0
V
Collector Current
IC
mA
Power Dissipation @ Ta=25ºC
PD
mW
Junction Temperature
Tj
ºC
Storage Temperature Range
Tstg
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
UNITS
MIN
MAX
MIN MAX MIN
MAX
Collector Cut off Current
ICBO
VCB=120V, IE=0
20
n
Α
VCB=90V, IE=0
20
n
Α
VCB=60V, IE=0
20
n
Α
DC Current Gain
hFE
IC=150mA,VCE=10V
BC300/301/302
40
240
BC300/301/302-4
40
80
BC300/301/302-5
IC=150mA,VCE=10V
70
140
BC300/301/302-6
IC=150mA,VCE=10V
120
240
Collector Emitter Sat Voltage
VCE(Sat) IC=150mA,IB=15mA
ALL
0.5
V
DYNAMIC CHARACTERISTICS
Transition Frequency
fT
VCE=10V,IC=50mA,
ALL
f=20MHz
100
400
MHz
BC300
BC301
BC302
500
850
175
-65 to +200
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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