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FOD617CSD Datenblatt(PDF) 3 Page - Fairchild Semiconductor

Teilenummer FOD617CSD
Bauteilbeschribung  FOD814 Series, FOD817 Series FOD814 Series, FOD817 Series Phototransistor Optocouplers
PDF  12 Pages
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FOD617CSD Datenblatt(HTML) 3 Page - Fairchild Semiconductor

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©2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5
3
Electrical Characteristics (T
A = 25°C Unless otherwise specified.)
Individual Component Characteristics
DC Transfer Characteristics
AC Transfer Characteristics
*Typical values at TA = 25°C
Symbol
Parameter
Device
Test Conditions
Min.
Typ.*
Max.
Unit
EMITTER
VF
Forward Voltage
FOD814
IF = ±20mA
1.2
1.4
V
FOD817
IF = 20mA
1.2
1.4
IR
Reverse Leakage Current
FOD817
VR = 4.0V
10
µA
Ct
Terminal Capacitance
FOD814
V = 0, f = 1kHz
50
250
pF
FOD817
V = 0, f = 1kHz
30
250
DETECTOR
ICEO
Collector Dark Current
FOD814
VCE = 20V, IF = 0
100
nA
FOD817
VCE = 20V, IF = 0
100
BVCEO
Collector-Emitter Breakdown
Voltage
FOD814
IC = 0.1mA, IF = 0
70
V
FOD817
IC = 0.1mA, IF = 0
70
BVECO
Emitter-Collector Breakdown
Voltage
FOD814
IE = 10µA, IF = 0
6
V
FOD817
IE = 10µA, IF = 0
6
Symbol
DC
Characteristic
Device
Test Conditions
Min.
Typ.*
Max.
Unit
CTR
Current Transfer
Ratio
FOD814
IF = ±1mA, VCE = 5V
(1)
20
300
%
FOD814A
50
150
FOD817
IF = 5mA, VCE = 5V
(1)
50
600
FOD817A
80
160
FOD817B
130
260
FOD817C
200
400
FOD817D
300
600
VCE (sat) Collector-Emitter
Saturation Voltage
FOD814
IF = ±20mA, IC = 1mA
0.1
0.2
V
FOD817
IF = 20mA, IC = 1mA
0.1
0.2
Symbol AC Characteristic
Device
Test Conditions
Min.
Typ.*
Max.
Unit
fC
Cut-Off Frequency
FOD814
VCE = 5V, IC = 2mA, RL = 100Ω,
-3dB
15
80
kHz
tr
Response Time (Rise)
FOD814,
FOD817
VCE = 2 V, IC = 2mA, RL = 100Ω
(2)
418
µs
tf
Response Time (Fall)
FOD814,
FOD817
318
µs



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