STP9NM40N datasheet(1/18 Pages) STMICROELECTRONICS

Teilenummer	STP9NM40N

Bauteilbeschribung	N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™II Power MOSFET in DPAK and TO-220 packages

PDF	18 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 18 page

This is information on a product in full production.

December 2012

Doc ID 023762 Rev 2

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18

STD9NM40N, STP9NM40N

N-channel 400 V, 0.73

Ω typ., 5.6 A MDmesh™ II Power MOSFET

in DPAK and TO-220 packages

Datasheet — production data

Features

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Applications

■ Switching applications

Description

These devices are N-channel Power MOSFETs

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

Figure 1.

Internal schematic diagram

Order codes

VDSS@TJMAX RDS(on)max.

ID

STD9NM40N

450 V

< 0.79

Ω

5.6 A

STP9NM40N

DPAK

1

3

TAB

TO-220

1

2

3

TAB

Table 1.

Device summary

Order codes

Marking

Packages

Packaging

STD9NM40N

9NM40N

DPAK

Tape and reel

STP9NM40N

TO-220

Tube

www.st.com

Ähnliche Beschreibung - STP9NM40N

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