Preliminary

GaN Hybrid Power Amplifier

TG2000-10

Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com

All specifications may change without notice

US Facilities : 919-677-8780 / sales@rfhicusa.com

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Version 0.6

Mechanical Specifications

PARAMETER

UNIT

TYP

REMARK

Mass

g

1

-

Dimension

mm

15 x 10 x 5.4

Outermost

Absolute Maximum Ratings

PARAMETER

UNIT

RATING

SYMBOL

Gate-Source Voltage

V

-10 ~ 0

Vgs

Drain-Source Voltage

V

50

Vds

Gate Current

mA

3.6

Ig

Operating Junction Temperature

°C

225

Operating Case Temperature

°C

-40 ~ 85

Storage Temperature

°C

-40 ~ 100

Operating Voltages

PARAMETER

UNIT

MIN

TYP

MAX

SYMBOL

Drain Voltage

V

-

+28

-

Vds

Gate Voltage (on-state)

V

-

-2

Vgs

Gate Voltage (off-state)

V

-

-8

-

Vgs

Block Diagram

Input

Matching

Circuit

Output

Matching

Circuit

Input

Output

390Ω

1nF

1uF

Input

Matching

Circuit

Output

Matching

Circuit

Input

Matching

Circuit

Output

Matching

Circuit

Input

Output

390Ω

1nF

1uF

+Vds

-Vgs

Input

Matching

Circuit

Output

Matching

Circuit

Input

Output

-Vgs

+Vds

200MHz~2000MHz

30MHz~2000MHz