NVT2004 datasheet(13/33 Pages) PHILIPS

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NVT2003_04_06

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Product data sheet

Rev. 5 — 19 February 2014

13 of 33

NXP Semiconductors

NVT2003/04/06

Bidirectional voltage-level translator

Recommended operating conditions

[1]

Vref(A)  Vref(B)  1 V for best results in level shifting applications.

10. Static characteristics

[1]

All typical values are at Tamb =25 C.

[2]

Not production tested, maximum value based on characterization data of typical parts.

[3]

Measured by the voltage drop between the An and Bn terminals at the indicated current through the switch. ON-state resistance is

determined by the lowest voltage of the two terminals.

[4]

See curves in Figure 12 for typical temperature and VI(EN) behavior.

[5]

Guaranteed by design.

Table 10.

Operating conditions

Symbol

Parameter

Conditions

Min

Max

Unit

VI/O

voltage on an input/output pin

An, Bn

5.5

Vref(A)

reference voltage (A)

VREFA

[1] 05.4

Vref(B)

reference voltage (B)

VREFB

[1] 05.5

VI(EN)

input voltage on pin EN

5.5

Isw(pass)

pass switch current

Tamb

ambient temperature

operating in free-air

40

+85

C

Table 11.

Static characteristics

Tamb = 40 C to +85 C, unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ[1]

Max

Unit

VIK

input clamping voltage

II = 18 mA; VI(EN) =0 V

1.2

IIH

HIGH-level input current

VI =5 V; VI(EN) = 0 V

--5

A

Ci(EN)

input capacitance on pin EN

VI = 3 V or 0 V

Cio(off)

off-state input/output capacitance

An, Bn; VO =3V or0V;

VI(EN) =0 V

57pF

Cio(on)

on-state input/output capacitance

An, Bn; VO =3V or0V;

VI(EN) =3 V

-11.5

13[2]

Ron

ON-state resistance

An, Bn; VI =0V; IO =64mA;

VI(EN) =4.5 V

[3][4][5] 12.4

5.0



VI =2.4 V; IO =15mA;

VI(EN) =4.5 V

[3][4] -4.8

7.5



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