SM30T23AY datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

Characteristics

SM30TY

4/12

DocID022065 Rev 3

Figure 3. Peak pulse power dissipation versus

initial junction temperature (typical value)

Figure 4. Peak pulse power versus exponential

pulse duration (Tj initial = 25 °C)

P(W)

500

1000

1500

2000

2500

3000

3500

100

125

150

175

T (°C)

10/1000 µs

P (kW)

0.1

1.0

10.0

100.0

1000.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

T initial = 25 °C

)

P ms

Figure 5. Clamping voltage versus peak pulse

current

(exponential waveform, maximum values)

Figure 6. Junction capacitance versus reverse

applied voltage for unidirectional types

(typical values)

I(A)

0.1

1.0

10.0

100.0

1000.0

100

10/1000 µs

8/20 µs

V(V)

T initial = 25 °C

C(nF)

0.1

1.0

10.0

100

SM30T18AY

SM30T39AY

F = 1 MHz

= 30 mV

T = 25 °C

OSC

RMS

V(V)

Figure 7. Junction capacitance versus reverse

applied voltage for bidirectional types

(typical values)

Figure 8. Leakage current versus junction

temperature (typical values)

0.1

1.0

10.0

100

C(nF)

SM30T18CAY

SM30T39CAY

F = 1 MHz

= 30 mV

T = 25 °C

OSC

RMS

V(V)

1.E+00

1.E+01

1.E+02

1.E+03

100

125

150

V= V

RRM

I (nA)

T (°C)

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