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MB84VB2000 Datenblatt(PDF) 26 Page - fujitsu semiconductor

Teilenummer MB84VB2000
Bauteilbeschribung  8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
PDF  28 Pages
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Hersteller  FUJITSU [fujitsu semiconductor]
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MB84VB2000 Datenblatt(HTML) 26 Page - fujitsu semiconductor

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MB84VB2000-10/MB84VB2001-10
s ERASE AND PROGRAMMING PERFORMANCE
s PIN CAPACITANCE
Note: Test conditions TA = 25°C, f = 1.0 MHz
s HANDLING OF PACKAGE
Please hadle this package carefully since the sides of package are right angle.
Parameter
Limits
Unit
Comments
Min.
Typ.
Max.
Sector Erase Time
—
1
15
sec
Excludes programming time
prior to erasure
Word Programming Time
—
16
5,200
µs
Excludes system-level
overhead
Byte Programming Time
—
8
3,600
µs
Chip Programming Time
(1M Byte)
—8.4
50
sec
Excludes system-level
overhead
Erase/Program Cycle
100,000
—
—
cycles
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
CIN
Input Capacitance
VIN = 0
TBD
TBD
pF
COUT
Output Capacitance
VOUT = 0
TBD
TBD
pF
CIN2
Control Pin Capacitance
VIN = 0
TBD
TBD
pF



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