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1N4151 Datenblatt(PDF) 1 Page - General Semiconductor

Teilenummer 1N4151
Bauteilbeschribung  SMALL SIGNAL DIODES
PDF  4 Pages
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Hersteller  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

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1N4151
SMALL SIGNAL DIODES
FEATURES
¨ Silicon Epitaxial Planar Diode
¨ Fast switching diode.
¨ This diode is also available in other case
styles including the SOD-123
case with the type designation 1N4151W
and the Mini-MELF case with the type
designation LL4151.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS
Ratings at 25¡C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Reverse Voltage
VR
50
Volts
Peak Reverse Voltage
VRM
75
Volts
Rectified Current (Average)
Half Wave Rectification with Resist. Load
IO
150(1)
mA
at Tamb = 25 ¡C and f
³ 50 Hz
Surge Forward Current at t < 1s and Tj = 25¡C
IFSM
500
mA
Power Dissipation at Tamb = 25¡C
Ptot
500(1)
mW
Junction Temperature
Tj
175
¡C
Storage Temperature Range
TS
Ð 65 to +175
¡C
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Dimensions in inches and (millimeters)
DO-35
max. ÆŸ
Cathode
.020 (0.52)
Mark
max.
ÆŸ.079 (2.0)
1/4/99
Dimensions in inches and (millimeters)


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