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IMBD4148 Datenblatt(PDF) 2 Page - General Semiconductor |
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IMBD4148 Datenblatt(HTML) 2 Page - General Semiconductor |
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2 / 4 page ![]() ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified IMBD4148 Symbol Min. Typ. Max. Unit Forward Voltage at IF = 10 mA VF ––1 V Leakage Current at VR = 70 V at VR = 70 V, Tj = 150 °C at VR = 25 V, Tj = 150 °C IR IR IR – – – – – – 2.5 50 30 µA µA µA Capacitance at VF = VR = 0 Ctot ––4pF Reverse Recovery Time from IF = 10 mA to IR = 10 mA VR = 6 V, RL = 100 Ω trr ––4ns Thermal Resistance Junction to Ambient Air RthJA – – 4501) K/W 1) Device on fiberglass substrate, see layout Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12) |
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