Subject to change without notice.

www.cree.com

Copyright © 2006, Cree, Inc.

CREE CONFIDENTIAL

RT200 Gen 3 Schematic

PRELIMINARY

CxxxRT200-Sxxxx Chip Diagram

FEATURES

Thin 95 μm Chip

Reduced Forward Voltage

3.0 V Typical at 5 mA

RazerThin LED Performance

460 nm - 10 mW min.

470 nm - 8 mW min.

527 nm - 2 mW min.

Single Wire Bond Structure

Class 2 ESD Rating

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APPLICATIONS

Mobile Phone Key Pads

White LEDs

Blue LEDs

Green LEDs

Cellular Phone LCD Backlighting

Automotive Dashboard Lighting

LED Video Displays

Audio Product Display Lighting

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CxxxRT200-Sxxxx

Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials

LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward

voltage. Cree’s RazerThin series chips have the ability to withstand 1000 V ESD.

Top View

Bottom View

G•SiC LED Chip

200 x 200 μm

t = 95 μm

Backside

Metallization

Gold Bond Pad

112 μm Diameter

Die Cross Section

Cathode (-)

Anode (+)

90 μm square

170 x 170 μm