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2SC1213 Datenblatt(PDF) 2 Page - Hitachi Semiconductor

Teilenummer 2SC1213
Bauteilbeschribung  Silicon NPN Epitaxial
PDF  5 Pages
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Hersteller  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC1213 Datenblatt(HTML) 2 Page - Hitachi Semiconductor

  2SC1213 Datasheet HTML 1Page - Hitachi Semiconductor 2SC1213 Datasheet HTML 2Page - Hitachi Semiconductor 2SC1213 Datasheet HTML 3Page - Hitachi Semiconductor 2SC1213 Datasheet HTML 4Page - Hitachi Semiconductor 2SC1213 Datasheet HTML 5Page - Hitachi Semiconductor  
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2SC1213, 2SC1213A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC1213
2SC1213A
Unit
Collector to base voltage
V
CBO
35
50
V
Collector to emitter voltage
V
CEO
35
50
V
Emitter to base voltage
V
EBO
44V
Collector current
I
C
500
500
mA
Collector power dissipation
P
C
400
400
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SC1213
2SC1213A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
35
—
—
50
—
—
V
I
C = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
35
—
—
50
—
—
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
4—
—
4
—
—
V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
—
—
0.5
—
—
0.5
µAV
CB = 20 V, IE = 0
DC current tarnsfer ratio h
FE*
1
60
—
320
60
—
320
V
CE = 3 V, IC =10 mA
h
FE
10
—
—
10
—
—
V
CE = 3 V,
I
C = 500 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
—
0.2
0.6
—
0.2
0.6
V
I
C = 150 mA,
I
B = 15 mA*
2
Base to emitter voltage
V
BE
—
0.64
—
—
0.64
—
V
V
CE = 3 V, IC = 10 mA
Notes: 1. The 2SC1213 and 2SC1213A are grouped by h
FE as follows.
2. Pulse test
BC
D
60 to 120
100 to 200
160 to 320



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