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IXTY1N100P Datenblatt(PDF) 4 Page - IXYS Corporation |
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IXTY1N100P Datenblatt(HTML) 4 Page - IXYS Corporation |
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4 / 4 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXTA1N100P IXTP1N100P IXTY1N100P IXYS REF: T_1N100P(1C)4-03-08-A Fig. 7. Input Admittance 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGS - Volts TJ = 125ºC 25ºC - 40ºC Fig. 8. Transconductance 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 ID - Amperes TJ = - 40ºC 25ºC 125ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VSD - Volts TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 QG - NanoCoulombs VDS = 500V I D = 0.5A I G = 10mA Fig. 11. Capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Maximum Transient Thermal Impedance 0.1 1.0 10.0 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds |
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