TN2106

General Description

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input

impedance and positive temperature coefficient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

N-Channel Enhancement-Mode

Vertical DMOS FET

Absolute Maximum Ratings

Parameter

Value

Drain-to-source

BV

DSS

Drain-to-gate

BV

DGS

Gate-to-source

±20V

Operating and storage temperature

Soldering temperature*

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

Ordering Information

Device

Package Option

BV

(V)

R

DS(ON)

(max)

(Ω)

V

GS(th)

(max)

(V)

TO-236AB (SOT-23)

TO-92

TN2106

TN2106K1-G

TN2106N3-G

60

2.5

2.0

-G indicates package is RoHS compliant (‘Green’)

Pin Configurations

TO-236AB (SOT-23) (K1)

Product Marking

TO-236AB (SOT-23) (K1)

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

T N

2 1 0 6

Y Y W W

DRAIN

SOURCE

GATE

TO-92 (N3)

= “Green” Packaging

GATE

SOURCE

DRAIN

TO-92 (N3)

Features

Applications

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo-voltaic drives

Analog switches

General purpose line drivers

Telecom switches

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