PD20010STR-E datasheet(4/13 Pages) STMICROELECTRONICS

Teilenummer	PD20010STR-E

Bauteilbeschribung	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PDF	13 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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4 / 13 page

Electrical characteristics

PD20010-E

4/13

Doc ID 15514 Rev 2

Electrical characteristics

TCASE = + 25 °C

2.1

Static

2.2

Dynamic

2.3

ESD protection characteristics

2.4

Moisture sensitivity level

Table 4.

Static

Symbol

Test conditions

Min.

Typ.

Max.

Unit

IDSS

VGS = 0V

VDS = 25 V

µA

IGSS

VGS = 5 V

VDS = 0 V

µA

VGS(Q)

VDS = 10 V

ID = 150 mA

3.0

4.3

VDS(ON)

VGS = 10 V

ID = 1 A

0.34

CISS

VGS = 0V

VDS = 12.5 V

f = 1 MHz

COSS

VGS = 0V

VDS = 12.5 V

f = 1 MHz

CRSS

VGS = 0V

VDS = 12.5 V

f = 1 MHz

1.2

Table 5.

Dynamic

Symbol

Test conditions

Min.

Typ.

Max.

Unit

P3dB

VDD = 13.6 V, IDQ = 150 mA

f = 2000 MHz

VDD = 13.6 V, IDQ = 150 mA, POUT = 10 W, f = 2000 MHz

VDD = 13.6 V, IDQ = 150 mA, POUT = P3dB, f = 2000 MHz

Load

mismatch

VDD = 15.5 V, IDQ = 300 mA, POUT = 10 W, f = 2000 MHz

All phase angles

20:1

VSWR

Table 6.

ESD protection characteristics

Test conditions

Class

Human body model

Machine model

Table 7.

Moisture sensitivity level

Test conditions

Rating

J-STD-020B

MSL 3

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