D5V0L1B2T

Document number: DS35597 Rev. 5 - 2

2 of 4

www.diodes.com

June 2012

© Diodes Incorporated

D5V0L1B2T

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

84

W

8/20

μs, per Fig. 2

Peak Pulse Current

6

A

8/20

μs, per Fig. 2

ESD Protection – Contact Discharge

±30

kV

IEC 61000-4-2 Standard

ESD Protection – Air Discharge

±30

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 6)

150

mW

Thermal Resistance, Junction to Ambient (Note 6)

833

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

-

-

5

V

-

Channel Leakage Current (Note 7)

-

10

100

nA

Clamping Voltage, Positive Transients

-

-

-

-

7.0

8.7

10.5

11.5

9.0

10.7

12.0

14.0

V

Breakdown Voltage

6

7

8

V

Differential Resistance

-

0.2

-

Ω

Channel Input Capacitance

-

15

20

pF

Notes:

6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

0

50

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Dissipation vs. Ambient Temperature

A

0

100

25

75

175 200

0

t, TIME ( s)

Fig. 2 Pulse Waveform

μ

20

40

60

100

50

0