2SB1181-R datasheet(1/2 Pages) KEXIN

Teilenummer	2SB1181-R

Bauteilbeschribung	PNP Transistors

PDF	2 Pages

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SB1181

■

Features

●

Hight breakdown voltage and high current.

●

Low collector-emitter saturation voltage VCE(sat)

●

Good hFE linearty.

●

Complementary to 2SD1733

2.3

0.60+ 0.1

- 0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4 .60 +0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-80

Collector - Emitter Voltage

VCEO

-80

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-1

Collector current -Pulse

ICP

-2

Collector Power Dissipation

Tc=25°C

10

Ta = 25℃

1

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

PC

W

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-80

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA, IB=0

-80

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -60V , IE=0

-1

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-1

Collector-emitter saturation voltage

VCE(sat) IC=-500 mA, IB=-50mA

-0.4

Base - emitter saturation voltage

VBE(sat) IC=-500 mA, IB=-50mA

-1.2

DC current gain

hFE

VCE= -3V, IC= -100 mA

120

390

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

25

pF

Transition frequency

fT

VCE= -10V, IE= 50mA,f=100MHz

100

MHz

V

uA

■

Classification of hfe

Type

2SB1181-Q

2SB1181-R

Range

120-270

180-390

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