2SD875-R datasheet(1/2 Pages) KEXIN

Teilenummer	2SD875-R

Bauteilbeschribung	NPN Transistors

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

NPN Transistors

2SD875

■

Features

●

Large collector power dissipation PC.

●

High collector to emitter voltage VCEO.

●

Complimentary to 2SB767

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

80

Collector - Emitter Voltage

VCEO

80

Emitter - Base Voltage

VEBO

5

Collector Current - Continuous

IC

0.5

Collector Current - Pulse

ICP

1

Collector Power Dissipation

PC

1

W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

80

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0

80

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

5

Collector-base cut-off current

ICBO

VCB= 60V , IE= 0

100

Emitter cut-off current

IEBO

VEB= 4V , IC=0

100

Collector-emitter saturation voltage

VCE(sat) IC=300 mA, IB=30mA

0.2

0.4

Base - emitter saturation voltage

VBE(sat) IC=300 mA, IB=30mA

0.85

1.2

hFE(1)

VCE= 10V, IC= 150mA

130

330

hFE(2)

VCE= 5V, IC= 500mA

50

100

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

11

pF

Transition frequency

fT

VCE= 10V, IE= -50mA,f=200MHz

120

MHz

DC current gain

V

nA

V

■

Classification of hfe(1)

Type

2SD875-R

2SD875-S

Range

130-220

185-330

Marking

XR

XS

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