2SD1821-R datasheet(1/2 Pages) KEXIN

Teilenummer	2SD1821-R

Bauteilbeschribung	NPN Transistors

PDF	2 Pages

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

NPN Transistors

2SD1821

■

Features

●

Low Collector-to-Emitter Saturation Voltage

●

Low noise voltage NV.

●

Complementary to 2SB1220

1 Base

2 Emitter

3 Collector

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

150

Collector - Emitter Voltage

VCEO

150

Emitter - Base Voltage

VEBO

5

Collector Current - Continuous

IC

50

Collector Current - Pulse

ICP

100

Collector Power Dissipation

PC

150

mW

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

mA

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

150

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0

150

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

5

Collector-base cut-off current

ICBO

VCB= 100 V , IE= 0

1

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

Collector-emitter saturation voltage

VCE(sat) IC=30mA, IB=3mA

1

Base - emitter saturation voltage

VBE(sat) IC=30mA, IB=3mA

1.2

DC current gain

hFE

VCE= 5V, IC= 10mA

130

330

Noise voltage

NV

VCE = 10V, IC = 1mA, GV = 80dB

Rg = 100kΩ, Function = FLAT

150

mV

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

2.3

pF

Transition frequency

fT

VCE= 10V, IE= -10 mA,f=200MHz

150

MHz

V

uA

■

Classification of hfe

Type

2SD1821-R

2SD1821-S

Range

130-220

185-330

Marking

PR

PS

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