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FSTYC9055D Datenblatt(PDF) 4 Page - Intersil Corporation

Teilenummer FSTYC9055D
Bauteilbeschribung  Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
PDF  8 Pages
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Hersteller  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSTYC9055D Datenblatt(HTML) 4 Page - Intersil Corporation

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FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Performance Curves Unless Otherwise Specified (Continued)
TC, CASE TEMPERATURE (
oC)
150
100
50
0
-50
0
20
40
30
10
70
60
50
100
10
1
-1
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
-10
-100
500
100
µs
1ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
-200
TC = 25
oC
CHARGE
QGD
QG
VG
QGS
-12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
PULSE DURATION = 250ms, VGS = -12V, ID = 41A
1
10-5
10-4
10-3
10-2
10-1
100
101
0.001
0.01
0.1
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z
θJC + TC
SINGLE PULSE
0.01
0.02
0.2
0.1
0.05
0.5
10
t, RECTANGULAR PULSE DURATION (s)
FSTYC9055D, FSTYC9055R



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