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FSYA150D Datenblatt(PDF) 4 Page - Intersil Corporation

Teilenummer FSYA150D
Bauteilbeschribung  Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
PDF  8 Pages
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Hersteller  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSYA150D Datenblatt(HTML) 4 Page - Intersil Corporation

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FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves Unless Otherwise Specified (Continued)
TC, CASE TEMPERATURE (
oC)
150
100
50
0
-50
0
20
40
30
10
50
100
10
1
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
100
500
TC = 25
oC
100
µs
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
300
10ms
CHARGE
QGD
QG
VG
QGS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
PULSE DURATION = 250ms,VGS = 12V, ID = 25A
10
1
0.1
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
0.001
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
SINGLE PULSE
PDM
t1
t2
0.01
0.02
0.05
0.1
0.2
0.5
FSYA150D, FSYA150R



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