2SD1898-R datasheet(1/2 Pages) KEXIN

Teilenummer	2SD1898-R

Bauteilbeschribung	NPN Transistors

PDF	2 Pages

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

NPN Transistors

2SD1898

■

Features

●

High VCEO, VCEO=80V

●

High IC, IC=1A (DC)

●

Low VCE (sat)

●

Complementary to 2SB1260

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

120

Collector - Emitter Voltage

VCEO

80

Emitter - Base Voltage

VEBO

5

Collector Current - Continuous

IC

1

Collector Current - Pulse

ICP

2

0.5

2

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

Collector Power Dissipation

V

℃

A

PC

W

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 uA， IE= 0

120

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA，IB= 0

80

Emitter - base breakdown voltage

VEBO

IE= 100 uA， IC= 0

5

Collector-base cut-off current

ICBO

VCB= 100 V , IE= 0

1

Emitter cut-off current

IEBO

VEB= 4V , IC=0

0.5

Collector-emitter saturation voltage

VCE(sat) IC=500 mA, IB=50 mA

0.15

0.4

Base - emitter saturation voltage

VBE(sat) IC=500 mA, IB=50 mA

1.2

DC current gain

hFE

VCE= 3V, IC= 500 mA

120

390

Collector Output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

20

pF

Transition frequency

fT

VCE= 10V, IE= -50mA,f=100MHz

100

MHz

V

uA

■

Classification of hfe

Type

2SD1898-Q

2SD1898-R

Range

120-270

180-390

Marking

DF Q*

DF R*

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