2SA1577-R datasheet(1/2 Pages) KEXIN

Teilenummer	2SA1577-R

Bauteilbeschribung	PNP Transistors

PDF	2 Pages

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SA1577

■

Features

●

Large IC. CMax.=-500mA

●

Low VCE(sat).Ideal for low-voltage operation.

●

Complements the 2SC4097.

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-40

Collector - Emitter Voltage

VCEO

-32

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-500

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-40

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA，IB=0

-32

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -20 V , IE=0

-1

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-1

Collector-emitter saturation voltage

VCE(sat) IC=-100 mA, IB=-10 mA

-0.4

Base - emitter saturation voltage

VBE(sat) IC=-100 mA, IB=-10 mA

-1.2

DC current gain

hFE

VCE= -3V, IC= -10mA

82

390

Collector output capacitance

Cob

VCB= -10V,IE=0, f=1MHz

7

pF

Transition frequency

fT

VCE= -5V, IC= -20mA,f=100MHz

200

MHz

V

uA

V

■

Classification of hfe

1.Base

2.Emitter

3.Collector

Type

2SA1577-P

2SA1577-Q

2SA1577-R

Range

82-180

120-270

180-390

Marking

HP

HQ

HR

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