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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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HGTP20N35G3VL Datenblatt(PDF) 2 Page - Intersil Corporation |
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HGTP20N35G3VL Datenblatt(HTML) 2 Page - Intersil Corporation |
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2 / 6 page  3-67 Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Electrical Specifications TC = +25 oC, Unless Otherwise Specified PARAMETERS SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX Collector-Emitter Breakdown Voltage BVCES IC = 10mA, VGE = 0V TC = +175 oC 310 345 380 V TC = +25 oC 320 350 380 V TC = -40 oC 320 355 390 V Collector-Emitter Breakdown Voltage BVCER IC = 10mA VGE = 0V RGE = 1kΩ TC = +175 oC 300 340 375 V TC = +25 oC 315 345 375 V TC = -40 oC 315 350 390 V Gate-Emitter Plateau Voltage VGEP IC = 10A VCE = 12V TC = +25 oC - 3.7 - V Gate Charge QG(ON) IC = 10A VGE = 5V VCE = 12V TC = +25 oC - 28.7 - nC Collector-Emitter Clamp Bkdn. Voltage BVCE(CL) IC = 10A RG = 0Ω TC = +175 oC 325 360 395 V Emitter-Collector Breakdown Voltage BVECS IC = 10mA TC = +25 oC20 32 - V Collector-Emitter Leakage Current ICES VCE = 250V TC = +25 oC- - 5 µA VCE = 250V TC = +175 oC - - 250 µA Collector-Emitter Saturation Voltage VCE(SAT) IC = 10A VGE = 4.5V TC = +25 oC - 1.3 1.6 V TC = +175 oC - 1.25 1.5 V IC = 20A VGE = 5.0V TC = +25 oC - 1.6 2.8 V TC = +175 oC - 1.9 3.5 V Gate-Emitter Threshold Voltage VGE(TH) IC = 1mA VCE = VGE TC = +25 oC 1.3 1.8 2.3 V Gate Series Resistance R1 TC = +25 oC - 1.0 - k Ω Gate-Emitter Resistance R2 TC = +25 oC 101725 k Ω Gate-Emitter Leakage Current IGES VGE = ±10V ±400 ±590 ±1000 µA Gate-Emitter Breakdown Voltage BVGES IGES = ±2mA ±12 ±14 - V Current Turn-Off Time-Inductive Load tD(OFF)I + tF(OFF)I IC = 10A, RG = 25Ω, L = 550 H, R L = 26.4Ω, VGE = 5V, VCL = 300V, TC = +175 oC -15 30 µs Inductive Use Test ISCIS L = 2.3mH, VG = 5V, RG = 0Ω TC = +175 oC18 - - A TC = +25 oC26 - - A Thermal Resistance RθJC - - 1.0 oC/W |
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