APM9435K datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel MOSFET

APM9435K (APM9435KC)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-30

VDS=-24V, VGS=0V

-1

VDS=-24V, VGS=0V, TJ=55℃

-30

Gate-Body leakage current

IGSS

VDS=0V, VGS=±25V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

-1

-2

VGS=-10V, ID=-4.6A (Note.1)

VGS=-4.5V, ID=-2A (Note.1)

Input Capacitance

Ciss

845

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

Gate resistance

VGS=0V, VDS=0V, f=1MHz

11.7

Total Gate Charge

22.5

Gate Source Charge

Qgs

4.5

Gate Drain Charge

Qgd

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

-2

Diode Forward Voltage

VSD

IS=-2A,VGS=0V (Note.1)

-1.3

Zero Gate Voltage Drain Current

IDSS

mΩ

VDD=-15V, RL=15Ω,

IDS=-1A, VGEN=-10V,

RG=6Ω

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=-25V, f=1MHz

VGS=-10V, VDS=-15V, ID=-4.6A

Note.1: Pulse test ; pulse width≤300μs, duty cycle≤2%.

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