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2SD1616A Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Teilenummer 2SD1616A
Bauteilbeschribung  NPN Plastic-Encapsulated Transistor
PDF  2 Pages
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Hersteller  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SD1616A Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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2SD1616A
1A , 120V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
12-Apr-2011 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.

Base

Emitter
Collector

RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power dissipation
CLASSIFICATION OF hFE (1)
Product-Rank
2SD1616A-L
2SD1616A-K
2SD1616A-U
Range
135~270
200~400
300~600
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
120
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
6
V
Collector Current - Continuous
IC
1
A
Collector Power Dissipation
PC
750
mW
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
120
-
-
V
IC=10μA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
60
-
-
V
IC=2mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
-
V
IE=10μA, IC=0
Collector Cut – Off Current
ICBO
-
-
0.1
μA
VCB=60V, IE=0
Emitter Cut – Off Current
IEBO
-
-
0.1
μA
VEB=6V, IC=0
DC Current Gain
hFE (1)
135
-
600
VCE=2V, IC=100mA
hFE (2)
81
-
-
VCE=2V, IC=1A
Collector to Emitter Saturation Voltage*
VCE(sat)
-
-
0.3
V
IC=1A, IB=50mA
Base to Emitter Saturation Voltage*
VBE(sat)
-
-
1.2
V
IC=1A, IB=50mA
Base to Emitter Voltage*
VBE
0.6
-
0.7
V
VCE=2V, IC=50mA
Transition Frequency
fT
100
-
-
MHz
VCE=2V, IC=100mA
Collector Output Capacitance
Cob
-
-
19
pF
VCB=10V, IE=0, f=1MHz
Turn on time
ton
-
0.07
-
μs
VCC=10V, IC=100mA,
IB1=-IB2=10mA
Storage time
tS
-
0.95
-
Fall time
tF
-
0.07
-
*pulse test: PW 350μs, σ 2%.
≦≦
Emitter
Collector
Base
TO-92
REF.
Millimeter
Min.
Max.
A
4.40
4.70
B
4.30
4.70
C
12.70
-
D
3.30
3.81
E
0.36
0.56
F
0.36
0.51
G
1.27 TYP.
H
1.10
-
J
2.42
2.66
K
0.36
0.76
A
C
E
F
D
G
H
J
B


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