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ISL83483IB Datenblatt(PDF) 13 Page - Intersil Corporation |
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ISL83483IB Datenblatt(HTML) 13 Page - Intersil Corporation |
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13 / 17 page ![]() 13 Die Characteristics SUBSTRATE POTENTIAL (POWERED UP): GND TRANSISTOR COUNT: 528 PROCESS: Si Gate CMOS FIGURE 16. DRIVER AND RECEIVER WAVEFORMS, LOW TO HIGH (ISL83485, ISL83490, ISL83491) FIGURE 17. DRIVER AND RECEIVER WAVEFORMS, HIGH TO LOW (ISL83485, ISL83490, ISL83491) Typical Performance Curves VCC = 3.3V, TA = 25oC, ISL83483 thru ISL83491; Unless Otherwise Specified (Continued) TIME (10ns/DIV) RDIFF = 54Ω, CL = 15pF 0 5 0 5 DI RO 0 0.5 1 1.5 2 2.5 3 B/Z A/Y TIME (10ns/DIV) RDIFF = 54Ω, CL = 15pF 0 5 0 5 DI RO 0 0.5 1 1.5 2 2.5 3 A/Y B/Z ISL83483, ISL83485, ISL83488, ISL83490, ISL83491 |
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