| Datenblatt-Suchmaschine für elektronische Bauteile |
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RJH60D2DPP-M0 Datenblatt(PDF) 3 Page - Renesas Technology Corp |
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RJH60D2DPP-M0 Datenblatt(HTML) 3 Page - Renesas Technology Corp |
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3 / 10 page ![]() RJH60D2DPP-M0 Preliminary R07DS0160EJ0400 Rev.4.00 Page 3 of 9 Apr 19, 2012 Main Characteristics 50 40 30 20 10 IGBT Output Characteristics (Typical) Collector to Emitter Voltage VCE (V) Case Temperature Tc (°C) Maximum DC Collector Current vs. Case Temperature 30 20 15 10 5 0 025 50 100 75 125 150 175 Collector to Emitter Voltage VCE (V) Turn-off SOA 0 200 400 600 800 Case Temperature Tc (°C) Collector Dissipation vs. Case Temperature 25 60 50 40 30 20 10 0 IGBT Output Characteristics (Typical) Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Maximum Safe Operation Area 100 10 0.1 1 0.01 1100 10 1000 Tc = 25 °C Single pulse 100 μs PW = 10 μs 0 50 40 30 20 10 012 4 3 50 1 2 4 3 5 Tc = 25°C Pulse Test V GE = 8 V 10 V 12 V 15 V 18 V Tc = 150°C Pulse Test V GE = 8 V 10 V 12 V 15 V 18 V 025 50 100 75 125 150 175 50 40 30 20 10 0 |
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