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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BAS16HT1 Datenblatt(PDF) 1 Page - SUNMATE electronic Co., LTD |
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BAS16HT1 Datenblatt(HTML) 1 Page - SUNMATE electronic Co., LTD |
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1 / 2 page  1 of 2 Features Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Mechanical Data · Case Molded Plastic K L M J C H BA SOD-323 Dim Min Max A 0.25 0.35 B 1.20 1.40 C 2.30 2.70 H 1.60 1.80 J 0.00 0.10 K 1.0 1.1 L 0.20 0.40 M 0.10 0.15 α 0° 8° All Dimensions in mm Ratings at 25 o C ambient temperature unless otherwise specified. SYMBOLS Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR IF IFSM VALUE 75 200 500 UNITS Vdc mAdc mAdc Ratings at 25 o C ambient temperature unless otherwise specified. SYMBOLS Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR IF IFSM VALUE 75 200 500 UNITS Vdc mAdc mAdc Ratings at 25 o C ambient temperature unless otherwise specified. SYMBOLS Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR IF IFSM VALUE 75 200 500 UNITS Vdc mAdc mAdc Ratings at 25 o C ambient temperature unless otherwise specified. SYMBOLS Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR IF IFSM VALUE 75 200 500 UNITS Vdc mAdc mAdc Ratings at 25 o C ambient temperature unless otherwise specified. SYMBOLS Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR IF IFSM VALUE 75 200 500 UNITS Vdc mAdc mAdc SYMBOLS Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR IF IFSM VALUE 75 200 500 UNITS Vdc mAdc mAdc SYMBOLS Reverse Voltage Leakage Current Reverse Breakdown Voltage Forward Voltage Junction Capacitance Forward Recovery Voltage Reverse Recovery Time Stored Charge ( VR=75Vdc ) ( VR=75Vdc, TJ=150 oC ) ( VR=25Vdc, TJ=150 oC ) ( IBR=100uAdc ) ( IF=1.0mAdc ) ( IF=10mAdc ) ( IF=50mAdc ) ( IF=150mAdc ) ( VR=0, f=1.0MHz ) ( IF=10mAdc, tr=20nS ) ( IF=IR=10mAdc, RL=50 ) ( IF=10mAdc, to VR=5.0Vdc, RL=500 ) IR V( BR ) VF CJ VFR trr QS UNITS MIN. MAX. - - - 1.0 50 30 uAdc Vdc 75 - - - - - 0.72 0.86 1.00 1.25 Vdc - 2.0 1.75 6.0 45 - - - pF Vdc nS pC CHARACTERISTIC SYMBOLS Reverse Voltage Leakage Current Reverse Breakdown Voltage Forward Voltage Junction Capacitance Forward Recovery Voltage Reverse Recovery Time Stored Charge ( VR=75Vdc ) ( VR=75Vdc, TJ=150 oC ) ( VR=25Vdc, TJ=150 oC ) ( IBR=100uAdc ) ( IF=1.0mAdc ) ( IF=10mAdc ) ( IF=50mAdc ) ( IF=150mAdc ) ( VR=0, f=1.0MHz ) ( IF=10mAdc, tr=20nS ) ( IF=IR=10mAdc, RL=50 ) ( IF=10mAdc, to VR=5.0Vdc, RL=500 ) IR V( BR ) VF CJ VFR trr QS UNITS MIN. MAX. - - - 1.0 50 30 uAdc Vdc 75 - - - - - 0.72 0.86 1.00 1.25 Vdc - 2.0 1.75 6.0 45 - - - pF Vdc nS pC CHARACTERISTIC BAS16HT1 200mA Surface Mount Switching Diode |
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Ähnliche Beschreibung - BAS16HT1 |
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