2SC3356 datasheet(2/9 Pages) RENESAS

Teilenummer	2SC3356

Bauteilbeschribung	NPN Silicon RF Transistor

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Hersteller	RENESAS [Renesas Technology Corp]

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2SC3356

R09DS0021EJ0300 Rev.3.00

Page 2 of 7

Jun 28, 2011

ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 10 V, IE = 0

–

1.0

μA

Emitter Cut-off Current

IEBO

VEB = 1.0 V, IC = 0

–

1.0

μA

DC Current Gain

hFE

Note 1

VCE = 10 V, IC = 20 mA

120

250

–

RF Characteristics

Gain Bandwidth Product

VCE = 10 V, IC = 20 mA

–

GHz

Insertion Power Gain

⏐S21e⏐2 VCE = 10 V, IC = 20 mA, f = 1 GHz

–

11.5

–

Noise Figure

VCE = 10 V, IC = 7 mA, f = 1 GHz

–

1.1

2.0

Reverse Transfer Capacitance

Cre

Note 2

VCB = 10 V, IE = 0, f = 1 MHz

−

0.55

1.0

Notes 1. Pulse measurement: PW

≤ 350

μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Q/YQ

R/YR

S/YS

Marking

R23

R24

R25

hFE Value

50 to 100

80 to 160

125 to 250

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