IRGPC40FD2 datasheet(1/8 Pages) IRF

Teilenummer	IRGPC40FD2

Bauteilbeschribung	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)

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Hersteller	IRF [International Rectifier]

Direct Link	http://www.irf.com

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C-117

Revision 1

IRGPC40FD2

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY

DIODE

Features

• Switching-loss rating includes all "tail" losses

• HEXFRED

TM soft ultrafast diodes

• Optimized for medium operating frequency (1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

E

G

n-channel

C

VCES = 600V

VCE(sat) ≤ 2.0V

@VGE = 15V, IC = 27A

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-Case - IGBT

—

0.77

RθJC

Junction-to-Case - Diode

—

1.7

°C/W

RθCS

Case-to-Sink, flat, greased surface

—

0.24

—

RθJA

Junction-to-Ambient, typical socket mount

—

40

Wt

Weight

—

6 (0.21)

—

g (oz)

Thermal Resistance

Absolute Maximum Ratings

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, motor control, UPS and power supply applications.

TO-247AC

Fast CoPack IGBT

PD - 9.1113

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

49

IC @ TC = 100°C

Continuous Collector Current

27

ICM

Pulsed Collector Current

200

A

ILM

Clamped Inductive Load Current

200

IF @ TC = 100°C

Diode Continuous Forward Current

15

IFM

Diode Maximum Forward Current

200

VGE

Gate-to-Emitter Voltage

± 20

V

PD @ TC = 25°C

Maximum Power Dissipation

160

W

PD @ TC = 100°C

Maximum Power Dissipation

65

TJ

Operating Junction and

-55 to +150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw.

10 lbf•in (1.1 N•m)

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