SSM452_15 datasheet(2/4 Pages) SECOS

2 / 4 page

SSM452

-6 A, -30V, RDS(ON) 55mΩ

P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

24-Jun-2010 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITION

Drain-Source Breakdown Voltage

BVDSS

-30

VGS= 0V, ID = -250uA

Breakdown Voltage

Temperature Coefficient

△

BVDSS / △TJ

-0.02

V / °C

Reference to 25°C,

ID= -1mA

Gate Threshold Voltage

VGS(TH)

-1.0

-3.0

VDS= VGS, ID = -250uA

Forward Transconductance

gFS

VDS= -10V, ID= -5.3A

Gate-Source Leakage Current

IGSS

±100

VGS= ±20V

Drain-Source Leakage Current

(TJ= 25°C)

IDSS

-1

μA

VDS= -30V, VGS=0V

Drain-Source Leakage Current

(TJ= 70°C)

-25

VDS= -24V, VGS=0V

Drain-Source On Resistance

RDS(ON)

mΩ

VGS= -10V, ID= -5.3A

100

VGS= -4.5V, ID= -4.2A

Total Gate Charge

9.2

VGS= -4.5V

VDS= -24V

ID= -5.3A

Gate-Source Charge

Qgs

2.8

Gate-Drain (“Miller”) Charge

Qgd

5.2

Turn-on Delay Time

Td(ON)

VDS= -15V

VGS= -10V

ID= -1A

RG= 6Ω, RD= 15Ω

Rise Time

Turn-off Delay Time

Td(OFF)

Fall Time

Input Capacitance

CISS

507

912

VDS= -15V

VGS= 0V

f= 1MHz

Output Capacitance

COSS

222

Reverse Transfer Capacitance

CRSS

158

SOURCE-DRAIN DIODE

Forward On Voltage

VSD

-1.2

VGS= 0V, IS= -2.3A

Reverse Recovery Time

Trr

VGS= 0V, IS= -5.3A,

dl/dt= 100A/μs

Reverse Recovery Charge

Qrr

Note:

1. Pulse width limited by Maximum junction temperature.

2. Pulse width ≦ 300 μs, Duty cycle ≦ 2%

3. Surface mounted on 1 in

2 copper pad of FR4 board; 120°C / W when mounted on Min. copper pad.

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