| Datenblatt-Suchmaschine für elektronische Bauteile |
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KDR105 Datenblatt(PDF) 1 Page - KEC(Korea Electronics) |
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KDR105 Datenblatt(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page ![]() 2003. 2. 25 1/2 SEMICONDUCTOR TECHNICAL DATA KDR105 SCHOTTKY BARRIER TYPE DIODE Revision No : 2 High frequency rectification (Switching regulators, converters, choppers) FEATURES Low Forward Voltage : VF max=0.55V. Low Leakage Current : IR max=10 A. MAXIMUM RATING (Ta=25 ) DIM MILLIMETERS A B D E 1. NC 2. ANODE 3. CATHODE USM 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 C G H J K L K 1 3 2 E B D H MM N N M 0.42 0.10 N 0.10 MIN 3 2 1 +_ +_ +_ +_ +_ ELECTRICAL CHARACTERISTICS (Ta=25 ) Marking D L CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=50 A 50 - - V Forward Voltage VF IF=0.1A - - 0.55 V Reverse Current IR VR=25V - - 10 A Total Capacitance CT VR=10V, f=1MHz - 7.7 - pF CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 50 V Reverse Voltage VR 50 V Average Forward Current IO 0.1 A Non-repetitive Peak Surge Current IFSM 2 A Junction Temperature Tj 125 Storage Temperature Tstg -55 125 |
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Ähnliche Beschreibung - KDR105 |
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