July 2007

Rev 2

1/7

AN1256

Application note

High-power RF MOSFET targets VHF applications

Introduction

The SD2933, which utilizes a double-diffused metal oxide (DMOS) semiconductor

technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family. The

packaged version is shown in Figure 1. The SD2933 is a single-ended, 50 V, 300 W, gold

(Au) metallized, N-channel, vertical Power MOSFET, intended for use up to 150 MHz, with

exceptionally high gain, and enhanced thermal packaging which makes it ideal for various

applications including plasma generation, excitation and FM broadcast applications. The

unique design of this single-ended 300 W Power MOSFET, makes it the only one of its class

available on the market today.

Figure 1.

SD2933 Package

Figure 2.

Two Enhancement - mode DMOS mounted in parallel

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