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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BAV19 Datenblatt(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BAV19 Datenblatt(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  - Fast switching device (trr<4.0ns) - Through-hole device type mounting - Hermetically sealed glasss - Solder hot dip tin (Sn) lead finish - All external surfaces are corrosion resistant and leads are readily solderable - Packing code with suffix "G" means Halogen free - Case: DO-35 package - High temperature soldering guaranteed: 260 oC/10s - Polarity: Indicated by black cathode band - Weight: 109 ± 4 mg SYMBOL UNIT PD mW Average Forward Current IO mA RθJA oC/W TJ , TSTG oC SYMBOL UNIT BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 CJ pF trr ns Document Number: DS_S1412015 Version: D14 Power Dissipation 500 BAV19 / BAV20 / BAV21 Taiwan Semiconductor Small Signal Product High Voltage Switching Diode FEATURES PARAMETER MIN DO-35 Hermetically Sealed Glass MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) PARAMETER VALUE A IFSM 4 - Reverse Leakage Current VR = 100 V - V(BR) VF Forward Voltage V - - 1.00 V 1.25 IF = 100 mA - IF = 200 mA - MECHANICAL DATA Peak Forward Surge Current Pulse Width = 1 s , Square Wave 1 Pulse Width = 1 μs , Square Wave 200 300 Junction and Storage Temperature Range -65 to +200 Thermal Resistance (Junction to Ambient) Reverse Breakdown Voltage IR = 100 μA 120 200 250 MAX nA VR = 150 V VR = 200 V Junction Capacitance VR = 0 , f = 1.0 MHz -5 IR Reverse Recovery Time (Note 1) - 50 Note 1: Test condition : IF= IR= 30mA , RL=100Ω , IRR=3mA 100 |
Ähnliche Teilenummer - BAV19 |
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Ähnliche Beschreibung - BAV19 |
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