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LTC1775CS Datenblatt(PDF) 13 Page - Linear Technology |
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LTC1775CS Datenblatt(HTML) 13 Page - Linear Technology |
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13 / 24 page ![]() 13 LTC1775 Schottky diode must be placed next to the synchronous switch to minimize this effect. One also might consider using a power switch with an integrated Schottky diode, or omitting the diode altogether in high current applications. CIN and COUT Selection In continuous mode, the drain current of the top MOSFET is approximately a square wave of duty cycle VOUT/VIN. To prevent large input voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS current is given by: II V V V V RMS O MAX OUT IN IN OUT ≅− () / 1 12 This formula has a maximum at VIN = 2VOUT, where IRMS = IO(MAX)/2. This simple worst-case condition is com- monly used for design because even significant deviations do not offer much relief. Note that ripple current ratings from capacitor manufacturers are often based on only 2000 hours of life. This makes it advisable to further derate the capacitor or to choose a capacitor rated at a higher temperature than required. Several capacitors may also be placed in parallel to meet size or height requirements in the design. The selection of COUT is primarily determined by the ESR required to minimize voltage ripple. The output ripple ∆VOUT is approximately bounded by: ∆∆ V I ESR fC OUT L OUT ≤+ 1 8 ()( )( ) Since ∆IL increases with input voltage, the output ripple is highest at maximum input voltage. Typically, once the ESR requirement is satisfied the capacitance is adequate for filtering and has the required RMS current rating. Manufacturers such as Nichicon, United Chemicon and Sanyo should be considered for high performance through- hole capacitors. The OS-CON (organic semiconductor dielectric) capacitor available from Sanyo has the lowest product of ESR and size of any aluminum electrolytic at a somewhat higher price. An additional ceramic capacitor in parallel with OS-CON capacitors is recommended to re- duce the effect of their lead inductance. In surface mount applications, multiple capacitors placed in parallel may be required to meet the ESR, RMS current handling and load step requirements. Dry tantalum, spe- cial polymer and aluminum electrolytic capacitors are available in surface mount packages. Special polymer capacitors offer very low ESR but have lower capacitance density than other types. Tantalum capacitors have the highest capacitance density but it is important to only use types that have been surge tested for use in switching power supplies. Several excellent surge-tested choices are the AVX TPS and TPSV or the KEMET T510 series. Aluminum electrolytic capacitors have significantly higher ESR, but can be used in cost-driven applications providing that consideration is given to ripple current ratings and long term reliability. Other capacitor types include Nichicon PL, NEC Neocap, Panasonic SP and Sprague 595D series. INTVCC Regulator An internal P-channel low dropout regulator produces the 5.2V supply which powers the drivers and internal cir- cuitry within the LTC1775. The INTVCC pin can supply a maximum RMS current of 50mA and must be bypassed to ground with a minimum of 4.7 µF tantalum or low ESR electrolytic capacitance. Good bypassing is necessary to supply the high transient currents required by the MOSFET gate drivers. High input voltage applications in which large MOSFETs are being driven at high frequencies may cause the LTC1775 to exceed its maximum junction temperature rating. Most of the supply current drives the MOSFET gates unless an external EXTVCC source is used. The junction temperature can be estimated from the equations given in Note 2 of the Electrical Characteristics. For example, the LTC1775CGN is limited to less than 14mA from a 30V supply: TJ = 70°C + (14mA)(30V)(130°C/W) = 125°C To prevent the maximum junction temperature from being exceeded, the input supply current must be checked when operating in continuous mode at high VIN. Relief can be provided by using the EXTVCC pin to provide the gate drive current. APPLICATIO S I FOR ATIO |
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