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LTC1775IGN Datenblatt(PDF) 12 Page - Linear Technology |
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LTC1775IGN Datenblatt(HTML) 12 Page - Linear Technology |
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12 / 24 page ![]() 12 LTC1775 Normally, the top and bottom MOSFETs will be of the same type. A bottom MOSFET with lower RDS(ON) than the top may be chosen if the resulting increase in short-circuit current is tolerable. However, the bottom MOSFET should never be chosen to have a higher nominal RDS(ON) than the top MOSFET. Inductor Core Selection Once the value for L is known, the type of inductor must be selected. High efficiency converters generally cannot afford the core loss found in low cost powdered iron cores, forcing the use of more expensive ferrite, molypermalloy or Kool M µ® cores. Actual core loss is independent of core size for a fixed inductor value, but it is very dependent on the inductance selected. As inductance increases, core losses go down. Unfortunately, increased inductance requires more turns of wire and therefore copper losses will increase. Ferrite designs have very low core loss and are preferred at high switching frequencies, so design goals can con- centrate on copper loss and preventing saturation. Ferrite core material saturates “hard,” which means that induc- tance collapses rapidly when the peak design current is exceeded. This results in an abrupt increase in inductor ripple current and consequent output voltage ripple. Do not allow the core to saturate! Molypermalloy (from Magnetics, Inc.) is a very good, low loss core material for toroids, but it is more expensive than ferrite. A reasonable compromise from the same manu- facturer is Kool M µ. Toroids are very space efficient, especially when you can use several layers of wire. Because they generally lack a bobbin, mounting is more difficult. However, designs for surface mount are available which do not increase the height significantly. Schottky Diode Selection The Schottky diode D1 shown in Figure 1 conducts during the dead time between the conduction of the power MOSFETs. This prevents the body diode of the bottom MOSFET from turning on and storing charge during the dead time, which could cost as much as 1% in efficiency. A 1A Schottky diode is generally a good size for 3A to 5A regulators. The diode may be omitted if the efficiency loss can be tolerated. Parasitic Lead Inductance Effects Because the LTC1775 is designed to operate with rela- tively large currents through single (or multiple) MOSFET switches, the lead inductance of these power switches can become a significant concern. The table below shows typical values of lead inductance for some common pack- ages: MOSFET Package Lead Inductance TO-220 4nH to 12nH DDPAK 4nH DPAK 1.5nH SO-8 1nH Of particular concern are switches in TO-220 packages which can have a series inductance of between 4nH and 12nH depending upon the depth of insertion into the circuit board. When the main (top) switch is turned on, the lead inductance LP forms a voltage divider with the power inductor L1. The voltage VLP across this parasitic adds to the voltage from the switch on-resistance and increases the current sense voltage. VLP = (VIN – VOUT)LP/L1 The result is lower value of current limit than would have been expected otherwise. For example, a 10nH lead induc- tance with a 5 µH power inductor has 50mV across it when VIN = 30V and VOUT = 5V. Thus, the 300mV current limit will be reached when the switch voltage due to on- resistance is only 250mV, a 17% reduction. This effect is most noticeable at higher input voltages. Lead inductance also reduces the benefit of the Schottky diode D1 by delaying commutation of the inductor current from the diode over to the synchronous (bottom) switch. With the diode forward biased when the synchronous switch turns on, there is only about 500mV applied across the lead and trace inductance between the switch and the diode. It takes about 400ns to commutate a 20A current in this case. This delay reduces efficiency and can also increase the foldback current limit of the LTC1775. The Kool M µ is a registered trademark of Magnetics, Inc. APPLICATIO S I FOR ATIO |
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