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RH27C Datenblatt(PDF) 3 Page - Linear Technology |
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RH27C Datenblatt(HTML) 3 Page - Linear Technology |
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3 / 4 page ![]() 3 RH27C TABLE 1A: ELECTRICAL CHARACTERISTICS Note 6: See test circuit for current noise measurement on OP-27/OP-37 data sheet. Note 7: The average input offset drift performance is within the specifica- tions unnulled or when nulled with a pot having a range 8k Ω to 20kΩ. Note 8: The RH27C’s inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds ±0.7V, the input current should be limited to 25mA. Note 9: VS = ±15V, VCM = 0V unless otherwise noted. Note 10: TA = 25°C, VS = ±15V, VCM = 0V, unless otherwise noted. Note 1: Input offset voltage measurements are performed by automatic test equipment approximately 0.5 seconds after application of power. Note 2: Long-term input offset voltage stability refers to the averaged trend line of offset voltage vs time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5 µV. Refer to the typical performance curve. Note 3: Sample tested to an LTPD of 15 on every lot. Contact factory for 100% testing of 10Hz voltage density noise. Note 4: Parameter is guaranteed by design, characterization, or correlation to other tested parameters. Note 5: See test circuit and frequency response curve for 0.1Hz to 10Hz tester on OP-27/OP-37 data sheet. TOTAL DOSE BIAS CIRCUIT 10k 15V –15V 10k –1 µF –1 µF 8V TYPICAL PERFOR A CE CHARACTERISTICS TOTAL DOSE KRAD (Si) 1 0 1 2 4 10 RH27C • TPC01 100 1000 3 VS = 15V RL = 2k TOTAL DOSE KRAD (Si) 1 0 1 2 4 10 RH27C • TPC02 100 1000 3 VS = 15V RL = 2k Positive Slew Rate Negative Slew Rate Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen- tation that the interconnection of its circuits as described herein will not infringe on existing patent rights. |
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