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STM4470 Datenblatt(PDF) 2 Page - SamHop Microelectronics Corp.

Teilenummer STM4470
Bauteilbeschribung  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Hersteller  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM4470 Datenblatt(HTML) 2 Page - SamHop Microelectronics Corp.

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STM4470
ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID 250uA
=
40
V
Zero Gate Voltage Drain Current
IDSS
VDS 32V, VGS 0V
=
1
uA
Gate-Body Leakage
IGSS
VGS
20V, VDS 0V
=
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
VGS(th)
VDS VGS, ID= 250uA
=
1
3
V
Drain-Source On-State Resistance
RDS(ON)
VGS 10V, ID 10A
10
VGS 4.5V, ID 6A
13
On-State Drain Current
ID(ON)
VDS= 10V, VGS= 10V
20
20
A
S
Forward Transconductance
FS
g
VDS 10V, ID 10A
DYNAMIC CHARACTERISTICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
Reverse Transfer Capacitance
VDS=20V, VGS= 0V
f =1.0MHZ
1020
P
F
240
P
F
P
F
135
SWITCHING CHARACTERISTICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
t
tD(OFF)
t
VDD = 20V
ID = 1A
VGS = 10V
RGEN= 3.3
15
ns
ns
ns
ns
22
12
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =20V, ID = 10A
VGS =10V
19.5
nC
nC
nC
C
Fall Time
=
=
=
=
2
5
8
11
48
2
5.5
1.7
m ohm
m ohm
ohm
nC
VDS =20V, ID = 10A,VGS =10V
VDS =20V, ID = 10A,VGS =4.5V
9.8
100
=
=
d
=
=



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