2

1

3

BV

R

DS(on) typ

I

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 25 nC (Typ.)

Extended Safe Operating Area

Lower R

DS(ON)

100% Avalanche Tested

Thermal Resistance Characteristics

FEATURES

Absolute Maximum Ratings

T

unless otherwise specified

HFS840

500V N-Channel MOSFET

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

500

V

I

D

Drain Current

– Continuous (T

9.0*

A

Drain Current

– Continuous (T

5.4*

A

I

DM

Drain Current

– Pulsed

(Note 1)

36*

A

V

GS

Gate-Source Voltage

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

360

mJ

I

AR

Avalanche Current

(Note 1)

9.0

A

E

AR

Repetitive Avalanche Energy

(Note 1)

13.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

P

D

Power Dissipation (T

44

W

0.35

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

2.86

R

JA

Junction-to-Ambient

--

62.5

Sep 2011

TO-220F

1.Gate 2. Drain 3. Source

* Drain current limited by maximum junction temperature