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HTB1A60 Datenblatt(PDF) 3 Page - SemiHow Co.,Ltd.

Teilenummer HTB1A60
Bauteilbeschribung  4 Quadrants Sensitive TRIAC
PDF  6 Pages
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Hersteller  SEMIHOW [SemiHow Co.,Ltd.]
Direct Link  http://www.semihow.com
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HTB1A60 Datenblatt(HTML) 3 Page - SemiHow Co.,Ltd.

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◎ SEMIHOW REV.A1,March 2013
Typical Characteristics
Fig 1. R.M.S. current vs. Power dissipation
Fig 2. R.M.S. current vs. Case temperature
Fig 3. Gate power characteristics
Fig 4. Surge on state current rating
(Non-repetitive)
Fig 5. Gate trigger current vs.
junction temperature
Fig 6. Gate trigger voltage vs.
junction temperature
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
180
o
150
o
120
o
90
o
60
o
30
o
R.M.S. on state current, I
T(RMS) [A]
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
V
+GT1
V
-GT1
V
+GT3
V
-GT3
Junction temperature, T
J[
oC]
10
0
10
1
10
2
0
3
6
9
12
15
50Hz
60Hz
Time [cycles]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
70
80
90
100
110
120
130
180
o
150
o
120
o
90
o
60
o
30
o
R.M.S. on state current, I
T(RMS) [A]
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
+GT3
Junction Temperature, T
J[
oC]
I
+GT1
I
-GT1
I
-GT3
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
25[
oC]
I
+GT3
25[
oC]
I
+GT1
I
-GT1
I
-GT3
P
G(AV)(0.2W)
P
GM(2W)
V
GD
Gate current, I
G [mA]



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