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2N6607 Datenblatt(PDF) 1 Page - Central Semiconductor Corp

Teilenummer 2N6607
Bauteilbeschribung  SILICON CONTROLLED RECTIFIER
PDF  2 Pages
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Hersteller  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

2N6607 Datenblatt(HTML) 1 Page - Central Semiconductor Corp

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2N6605
2N6606
2N6607
2N6608
SILICON CONTROLLED RECTIFIER
0.35 AMP, 30 THRU 200 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6605 Series
types are hermetically sealed silicon controlled
rectifiers manufactured in a TO-18 case, designed for
control systems and sensing circuit applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TC=25°C)
SYMBOL
2N6605
2N6606
2N6607
2N6608 UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
30
60
100
200
V
Average On-State Current
IO
0.35
A
Peak One Cycle Surge Current (t=8.3ms)
ITSM
6.0
A
Peak Gate Voltage
VGM
8.0
V
Operating Junction Temperature
TJ
-40 to +125
°C
Storage Temperature
Tstg
-40 to +150
°C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IDRM
Rated VDRM, RGK=1.0KΩ
120
nA
IRRM
Rated VRRM
250
nA
IGT
VD=6.0V, RL=100Ω
200
μA
VGT
VD=6.0V, RL=100Ω
0.8
V
VTM
IT=2.0A
2.0
V
IH
RGK=1.0KΩ
5.0
mA
R0 (30-March 2011)
www.centra lsemi.com


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