Part Description

Specifications subject to change without notice.

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3

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3.6 V, 450 mW DECT RF Power Amplifier IC

MA02203AD

V 1.0

Application Information

Static Sensitivity

Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when

handling these devices.

Board Layout

Sample Test Board

50 Ohm Lead Transition

Typical Performance Curves

Output Power and Current vs. Input Power

0

5

10

15

20

25

30

-10

-5

0

5

0.0

0.2

0.4

0.6

f = 1.89 GHz

Output Power, PAE, and VSWR vs. Frequency

0

5

10

15

20

25

30

35

40

45

1.7

1.8

1.9

2

ƒ, Frequency (GHz)

1:1

2:1

3:1

4:1

η

VSWR